30G Datasheet: GT45F IGBT V TOF, 30G PDF VIEW Download Toshiba, 30G 1 page Datasheet PDF, Pinouts, Data Sheet, Equivalent. Toshiba 30G Datasheet: GT45F IGBT V TOF, 30G Datasheet , 30G PDF, Datasheets PDF 30G, Pinout, Data Sheet, Circuits. Symbol. Min. Typ. Max. Units. BVCES. -. -. V. IGES. -. -. ± nA. ICES. -. -. 1. mA. VCE(sat). -. 3. V. -. -. V. VGE(th). 3. 7. V. Qg. -. nC.
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Datasheet archive on 30-5-2011
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Email to friends Share on Facebook — opens in a new window or tab Share on Twitter — opens in a new window or tab Share on Pinterest — opens in a new window or tab. Shipping cost cannot be calculated. Integrated Circuit 30f New datasjeet Original 30f In the future, Toshiba will launch IGBTs with varied characteristics optimized for high-current-conduction and high-frequency-switching applications.
Select a valid country. 30g122 More — opens in a new window or tab International 30g12 and import charges paid to Pitney Bowes Inc. The conductivity modulation characteristics of a bipolar transistor make it ideal for load control applications that require high breakdown voltage and high current.
In the future, Toshiba will launch IGBTs with varied characteristics optimized for high-current-conduction and high-frequency-switching applications.
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Seller assumes all responsibility for this listing. The IGBT has a low on-state voltage drop due to conductivity modulation. Please note the delivery estimate is greater than 7 business days.
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We sincerely look forward to establishing business relationship with you in the future. The conductivity modulation characteristics of a bipolar transistor make it ideal for load control applications that require high breakdown voltage and high current.
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30g igbt datasheet & applicatoin notes – Datasheet Archive
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